dmc2990udj document number: ds35481 rev. 9 - 2 1 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 20v 0.99 ? @ v gs = 4.5v 450ma 1.2 ? @ v gs = 2.5v 400ma 1.8 ? @ v gs = 1.8v 330ma 2.4 ? @ v gs = 1.5v 300ma q2 -20v 1.9 ? @ v gs = -4.5v -310ma 2.4 ? @ v gs = -2.5v -280ma 3.4 ? @ v gs = -1.8v -240ma 5 ? @ v gs = -1.5v -180ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low on-resistance ? very low gate threshold voltage, 1.0v max ? low input capacitance ? fast switching speed ? ultra-small surface mount package 1mm x 1mm ? low package profile, 0.45mm maximum package height ? esd protected gate ? totally lead-free & fully rohs compliant (note 1 & 2) ? halogen and antimony free. ?green? device (note 3 & 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot963 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.027 grams (approximate) ordering information (note 5 & 6) part number case packaging DMC2990UDJ-7 sot963 10k/tape & reel DMC2990UDJ-7b sot963 10k/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. product manufactured with date code uo (week 40, 2007) and newer are built with green molding compound. product manufacture d prior to date code uo are built with non-green molding compound and may contain halogens or sb 2 o 3 fire retardants. 5. the options -7 and -7b stand for different taping orientations . please refer to diodes website at http://www.diodes.com for further details. 6. for packaging details, go to our website at http?//www.diodes.com /products/packages.html marking information d1 = product type marking code esd protected top view sot963 d1 top view schematic and transistor dia g ram s 2 d 2 d 1 s 1 g 2 g 1 e3
dmc2990udj document number: ds35481 rev. 9 - 2 2 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product maximum ratings q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (note 7) v gs = 4.5v steady state t a = +25c t a = +70 ? c i d 450 350 ma t<5s t a = +25 ? c t a = +70 ? c i d 520 410 ma continuous drain current (note 7) v gs = 1.8v steady state t a = +25 ? c t a = +70 ? c i d 330 260 ma t<5s t a = +25 ? c t a = +70 ? c i d 390 310 ma maximum continuous body diode forward current (note 7) i s 440 ma pulsed drain current (note 8) i dm 800 ma maximum ratings q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25 ? c t a = +70 ? c i d -310 -240 ma t<5s t a = +25 ? c t a = +70 ? c i d -360 -280 ma continuous drain current (note 5) v gs = -1.8v steady state t a = +25 ? c t a = +70 ? c i d -240 -190 ma t<5s t a = +25 ? c t a = +70 ? c i d -280 -220 ma maximum continuous body diode forward current (note 7) i s -440 ma pulsed drain current (note 8) i dm -800 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 7) p d 350 mw thermal resistance, junction to ambient (note 7) steady state r ja 360 c/w t<5s 270 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 7. device mounted on fr-4 pcb, with minimum recommended pad layout. 8. device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%.
dmc2990udj document number: ds35481 rev. 9 - 2 3 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product electrical characteristics q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss - - 100 na v ds = 16v, v gs = 0v - - 50 v ds = 5v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 5v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) 0.4 - 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) - 0.60 0.99 ? v gs = 4.5v, i d = 100ma - 0.75 1.2 v gs = 2.5v, i d = 50ma - 0.90 1.8 v gs = 1.8v, i d = 20ma - 1.2 2.4 v gs = 1.5v, i d = 10ma - 2.0 - v gs = 1.2v, i d = 1ma forward transfer admittance |y fs | 180 850 - ms v ds = 5v, i d = 125ma diode forward voltage v sd - 0.6 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 10) input capacitance c iss - 27.6 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4.0 - pf reverse transfer capacitance c rss - 2.8 - pf gate resistance r g - 113 - ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge q g - 0.5 - nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q g s - 0.07 - nc gate-drain charge q g d - 0.07 - nc turn-on delay time t d ( on ) - 4.0 - ns v dd = 15v, v gs = 4.5v, r l = 47 ? , r g = 2 ? , i d = 200ma turn-on rise time t r - 3.3 - ns turn-off delay time t d ( off ) - 19.0 - ns turn-off fall time t f - 6.4 - ns electrical characteristics q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -250 a zero gate voltage drain current @t c = +25c i dss - - 100 na v ds = -16v, v gs = 0v - - 50 v ds = -5v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 5v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) -0.4 - -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) - 1.2 1.9 ? v gs = -4.5v, i d = -100ma - 1.5 2.4 v gs = -2.5v, i d = -50ma - 2.1 3.4 v gs = -1.8v, i d = -20ma - 2.5 5 v gs = -1.5v, i d = -10ma - 4.0 - v gs = -1.2v, i d = -1ma forward transfer admittance |y fs | 100 450 - ms v ds = -5v, i d = -125ma diode forward voltage v sd - -0.6 -1.0 v v gs = 0v, i s = -10ma dynamic characteristics (note 10) input capacitance c iss - 28.7 - pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4.2 - pf reverse transfer capacitance c rss - 2.9 - pf gate resistance r g - 399 - ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge q g - 0.4 - nc v gs = -4.5v, v ds =- 10v, i d = -250ma gate-source charge q g s - 0.08 - nc gate-drain charge q g d - 0.06 - nc turn-on delay time t d ( on ) - 5.8 - ns v dd = -15v, v gs = -4.5v, r g = 2 ? , i d = -200ma turn-on rise time t r - 5.7 - ns turn-off delay time t d ( off ) - 31.1 - ns turn-off fall time t f - 16.4 - ns notes: 9. short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to product testing.
dmc2990udj document number: ds35481 rev. 9 - 2 4 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product q1 n-channel 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 v , drain-source voltage (a) fig. 1 typical output characteristics ds i , drain current (a) d v = 1.2v gs v gs = 1.5v v gs = 2.0v v gs = 2.5v v gs = 3.0v v gs =4.0v v gs = 4.5v 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 v , gate-source voltage (v) fig. 2 typical transfer characteristics gs v = 5.0v ds t = -55c a t = a 25c t = a 85c t = a 125c t = a 150c i , drain current(a) d 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 i , drain-source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? v = 1.8v gs v = 2.5v gs v = 4.5v gs 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 t = a -55c t = a 25c t = a 85c t = 150c a t = a 125c i drain current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 -50-25 0 25 50 75100125150 t , junction temperature( c) fig. 5 on-resistance variation with temperature j ? r , drain-source on-resistance (normalized) ds(on) i = 150ma d i = 300ma d r , drain-source on-resistance ( ) ds(on) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 6 on-resistance variation with temperature j ? i = 150ma d i = 300ma d
dmc2990udj document number: ds35481 rev. 9 - 2 5 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 7 gate threshold variation vs. ambient temperature j ? v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 t = 25c a v , source- drain voltage (v) fig. 8 diodes forward voltage vs. current sd i, s o u r c e c u r r en t (a) s v , drain-source voltage (v) fig. 9 typical junction capacitance ds c t , j u n c t i o n c a p a c i t an c e (p f ) 50 40 30 20 10 0 10 15 20 5 0 f = 1mhz c iss c oss c rss 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 v , drain-source voltage (v) fig. 10 typical drain-source leakage current vs. voltage ds i , leakage current (na) dss t = a 25c t = a 85c t = a 125c t = 150c a 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 q - (nc) fig. 11 gate charge characteristics g v = 10v ds v, g a t e-s o u r c e v o l t a g e (v) gs 0.001 0.1 1 110100 p = 10s w dc p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w t = 150c t = 25c single pulse j(max) a 0.01 0.1 v , drain-source voltage fig. 12 soa, safe operation area ds i , drain current (a) d r limited ds(on)
dmc2990udj document number: ds35481 rev. 9 - 2 6 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product q2 p-channel 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 -v , drain-source voltage (v) fig. 13 typical output characteristics ds -i , drain current (a) d 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 -v , gate-source voltage (v) fig. 14 typical transfer characteristics gs -i , drain current(a) d v = -5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 3.5 4 -i , drain-source current fig. 15 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 0.2 0.4 0.6 0.8 v = -1.8v gs v = -4.5v gs 0 0.4 1.6 1.2 2.0 0 0.2 0.4 0.6 0.8 v = -4.5v gs -i drain current (a) fig. 16 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? t = 150c a t = 85c a t = 25c a t = -55c a t = 125c a 0.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 17 on-resistance variation with temperature j ? r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 v = -2.5v, i = -150ma gs d v = -4.5v, i = -300ma gs d r , drain-source on-resistance ( ) ds(on) ? -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 18 on-resistance variation with temperature j ? 0 0.4 0.8 1.2 1.6 2.0 2.4 v = -2.5v, i = -150ma gs d v = -4.5v, i = -300ma gs d
dmc2990udj document number: ds35481 rev. 9 - 2 7 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product 0 0.2 0.4 0.6 0.8 1.0 1. 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 19 gate threshold variation vs. ambient temperature j ? -v , gate threshold voltage (v) gs(th) i = -250a d i = -1ma d 0 0.2 0.4 0.6 0.8 0.4 0.6 0.8 1.0 1.2 t = 25c a v , source- drain voltage (v) fig. 20 diodes forward voltage vs. current sd i, s o u r c e c u r r en t (a) s v , drain-source voltage (v) fig. 21 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t f = 1mhz c iss c oss c rss 0 10 20 30 40 50 02 4 6 8 10 1 10 100 1,000 0 4 6 8 10 12 14 16 18 20 -v , drain-source voltage (v) fig. 22 typical leakage current vs. drain-source voltage ds -i , leakage current (na) dss t = 150c a t = 125c a t = 85c a t = -25c a 2 q , total gate charge (nc) fig. 23 gate charge characteristics g 0 1 2 3 4 5 0 2 4 6 8 1012141618 v = 10v, i = -4.5a ds d -v , g a t e s o u r c e v o l t a g e (v) gs 0.1 1 10 100 v , drain-source voltage (v) ds fig. 24 soa, safe operation area p = 10s w p = dc w p=1s w p = 100ms w i , drain current (a) d t = 150 c t= 25c single pulse j(max) a ? ? r limited ds(on) p=1ms w p = 100s w 0.001 0.01 0.1 1 10 p = 10s w p = 10ms w
dmc2990udj document number: ds35481 rev. 9 - 2 8 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 25 transient thermal resistance d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r(t), transient thermal resistance r (t) = r(t)*r r = 356c/w duty cycle, d = t1/t2 ?? ? ja ja ja package outline dimensions suggested pad layout sot963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 l c e d e1 e e1 b (6 places) a a1 y1 y (6x) c c x (6x)
dmc2990udj document number: ds35481 rev. 9 - 2 9 of 9 www.diodes.com march 2013 ? diodes incorporated dmc2990udj new product advance information advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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